Details of Sustainability Topics

Taiyo Nippon Sanso Corporation (TNSC), Taiyo Nippon Sanso ATI Corporation (TNATI), and the Tokyo University of Agriculture and Technology have achieved the high-speed growth of high-purity β-gallium oxide (β-Ga2O3) thick films using the metalorganic vapor phase epitaxy (MOVPE) method, which has been considered difficult. β-Ga2O3 is attracting attention as an important semiconductor for next-generation power devices, which are essential for increasing the efficiency of power control and conversion systems. Based on the reaction analysis result inside a proprietary crystal-growing reactor, we verified high-speed growth of high-purity β-Ga2O3 free from carbon impurities. This achievement is expected to lead to the practical application of mass production technology for β-Ga2O3 power devices for the realization of an energy-saving society in the future.

Low-pressure hot-wall MOVPE reactor
(FR2000-OX)