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Taiyo Nippon Sanso Corporation (TNSC) and the Innovation Center for Multi-Business of Nitride Semiconductors of Nagoya Institute of Technology jointly proposed “the development of metal-organic chemical vapor deposition (MOCVD) equipment for gallium nitride (GaN)-based power semiconductors on silicone (Si) substrates with excellent productivity” in response to the call for a Program to Develop and Promote the Commercialization of Energy Conservation Technologies to Realize a Decarbonized Society by the New Energy and Industrial Technology Development Organization (NEDO), and the proposal was accepted. The proposal aims to complete one of the world’s largest next-generation mass produced MOCVD equipment that can stably supply GaN/Si epi substrates with high electrical energy conversion efficiency. In doing so, the project will contribute to the realization of a decarbonized society and the revitalization of Japanese industries.